Global TFLN (LNOI) Wafer & Modulator Suppliers: 2026 Technical Sourcing Guide
For China-capable TFLN/LNOI sourcing in 2026, the practical shortlist is NanoLN for raw wafers with low MOQ and fast sample lead time, AFR for high-volume 800G/1.6T modulator chips, and Liobate for custom IDM and MPW foundry work. The supplier table below is a technical screening directory; specs are indicative, not guaranteed.
Supplier directory
| Supplier | Country | Wafer (size/cut/film) | Modulator/PIC | MOQ | Lead time | Export note | Sample |
|---|---|---|---|---|---|---|---|
| NanoLN (Jinan Jingzheng) | China | 4/6/8in, X&Z-cut, MgO, 300-900nm | material specialist | 1 wafer | 2-8 wk | MOFCOM dual-use may apply | Yes |
| Liobate | China | 4/6/8in, X-cut, 300-700nm | IDM 400G/1.6T + MPW foundry | 5-10 wafers | 6-12 wk | dual-use licensing | Yes |
| AFR (Advanced Fiber Resources) | China | in-house 6in (acquired Lumentum LN line) | 800G/1.6T DR8 chips | high-volume | 8-16 wk | moderate | eval kits |
| Ori-Chip | China | 4in LNOI | integrated 1.6T PICs | project | 4-10 wk | low | Yes |
| SITRI | China | 6/8in LNOI-on-Si | 200mm SiPh foundry | MPW | 3-5 mo | US-equipment-restriction risk | Foundry |
| HyperLight | USA | via UMC 6/8in chiplet | 110/145GHz modulators | 1-5 chips | 3-6 mo | ITAR/EAR above 40GHz | eval |
| CCRAFT/CSEM | Switzerland | 6in, 600nm, 4.7um BOX | pure-play foundry | MPW | 3-4 mo | EU export rules | Foundry |
| Partow Tech | USA | 3/4/6in ion-slicing | custom substrates | 3-5 wafers | 6-10 wk | US tech-transfer | Yes |
| NTT Innovative | Japan | 2-6in R&D | 3.2T engines | R&D | 4-6 mo | Japan export rules | limited |
Verify on the live registry and directly with the supplier before procurement. Specs, lead times, samples, MOQs, and export notes are indicative, not guaranteed.
Six key spec questions to ask
- TTV / GCIB trimming: what total thickness variation is guaranteed, and is gas cluster ion beam trimming included or available?
- Propagation loss at 1550nm: what test structure, waveguide geometry, and measurement method support the quoted loss?
- BOX thickness >4um: can the supplier provide 4um or thicker buried oxide for leakage-sensitive designs?
- Coupling loss to SMF-28: what grating, edge coupler, spot-size converter, or fibre-array data supports the claim?
- DC bias drift + integrated heaters: what stability data exists over temperature, drive voltage, and operating hours?
- MOFCOM dual-use licence: does the wafer, modulator, technical data, destination, or end use trigger licensing review?
How to use this directory
Start with the device layer you need. If the project needs raw TFLN wafers for in-house process development, qualify crystal cut, film thickness, BOX, TTV, bow, warp, particle count, and sample history. If the project needs a modulator or PIC, qualify optical bandwidth, RF bandwidth, Vpi, insertion loss, bias drift, packaging, and whether evaluation kits are available.
Then connect the supplier shortlist to the sourcing path. For earlier-stage programs, see deep-tech sourcing. For procurement execution, supplier qualification, and commercial negotiation, see the process. Export-control review should run before technical data packages, masks, design files, or end-use statements are exchanged.
Frequently asked questions
Who are the best China-capable TFLN sources for 2026?
For China-capable sourcing, NanoLN is the practical starting point for raw wafers with low MOQ and fast sample lead time; AFR is the stronger fit for high-volume 800G and 1.6T modulator chips; Liobate is relevant for custom IDM and MPW foundry paths.
Are the TFLN wafer specifications in this directory guaranteed?
No. All specifications, MOQs, lead times, export notes, and sample availability are indicative and must be verified directly with the supplier before procurement.
What TFLN wafer questions should buyers ask first?
Ask about TTV and GCIB trimming, propagation loss at 1550 nm, BOX thickness above 4 um, coupling loss to SMF-28, DC bias drift and integrated heaters, and whether a MOFCOM dual-use licence applies.
Do TFLN modulators trigger export-control review?
They can. High-speed modulators, dual-use photonics, and cross-border technical transfer may trigger MOFCOM, EAR, ITAR, EU, Swiss, or Japan export-control review depending on frequency, end use, destination, and technical data shared.
全球 TFLN（LNOI）晶圆与调制器供应商：2026 技术采购指南
2026 年具备中国能力覆盖的 TFLN/LNOI 采购起点：NanoLN 适合低 MOQ、快速样品的原始晶圆；AFR 更适合高批量 800G 和 1.6T 调制器芯片；Liobate 适合定制 IDM 与 MPW 代工路径。Asaptic 是独立采购伙伴；所有规格、交期、样品、MOQ 和出口说明均为指示性信息，采购前必须直接向供应商核实。
2026 供应商目录
| 供应商 | 国家/地区 | 晶圆（尺寸/切向/薄膜） | 调制器/PIC | MOQ | 交期 | 出口说明 | 样品 |
|---|---|---|---|---|---|---|---|
| NanoLN (Jinan Jingzheng) | China | 4/6/8in, X&Z-cut, MgO, 300-900nm | 材料 specialist | 1 wafer | 2-8 wk | 可能适用 MOFCOM dual-use | Yes |
| Liobate | China | 4/6/8in, X-cut, 300-700nm | IDM 400G/1.6T + MPW foundry | 5-10 wafers | 6-12 wk | dual-use licensing | Yes |
| AFR (Advanced Fiber Resources) | China | in-house 6in (acquired Lumentum LN line) | 800G/1.6T DR8 chips | 高批量 | 8-16 wk | 中等 | eval kits |
| Ori-Chip | China | 4in LNOI | integrated 1.6T PICs | 项目制 | 4-10 wk | 低 | Yes |
| SITRI | China | 6/8in LNOI-on-Si | 200mm SiPh foundry | MPW | 3-5 mo | US-equipment-restriction risk | Foundry |
| HyperLight | USA | via UMC 6/8in chiplet | 110/145GHz modulators | 1-5 chips | 3-6 mo | ITAR/EAR above 40GHz | eval |
| CCRAFT/CSEM | Switzerland | 6in, 600nm, 4.7um BOX | pure-play foundry | MPW | 3-4 mo | EU export rules | Foundry |
| Partow Tech | USA | 3/4/6in ion-slicing | custom substrates | 3-5 wafers | 6-10 wk | US tech-transfer | Yes |
| NTT Innovative | Japan | 2-6in R&D | 3.2T engines | R&D | 4-6 mo | Japan export rules | limited |
采购前请在实时来源并直接向供应商核实。规格、交期、样品、MOQ 和出口说明均为指示性信息，不构成保证。
优先询问的六个规格问题
- TTV / GCIB trimming：保证的总厚度变化是多少，是否包含或可提供 gas cluster ion beam trimming？
- 1550nm 传播损耗：报价损耗由什么测试结构、波导几何和测量方法支持？
- BOX thickness >4um：是否可提供 4um 或更厚的 buried oxide，用于对泄漏敏感的设计？
- 到 SMF-28 的耦合损耗：有什么 grating、edge coupler、spot-size converter 或 fibre-array 数据支撑？
- DC bias drift + integrated heaters：在温度、驱动电压和运行小时数上的稳定性数据如何？
- MOFCOM dual-use licence：晶圆、调制器、技术数据、目的地或最终用途是否触发许可证审查？
如何使用本目录
先从项目所需的器件层级开始。如果项目需要原始 TFLN 晶圆用于内部工艺开发，应确认 crystal cut、film thickness、BOX、TTV、bow、warp、particle count 和样品历史。如果项目需要调制器或 PIC，应确认 optical bandwidth、RF bandwidth、Vpi、insertion loss、bias drift、封装以及是否有评估套件。
然后把供应商短名单连接到采购路径。早期项目可参考深科技采购；采购执行、供应商资格确认和商业谈判可参考流程。在交换技术资料包、mask、设计文件或最终用途声明前，应先完成出口管制审查。
常见问题
2026 年哪些 TFLN 来源最适合中国能力覆盖采购？
原始晶圆可从 NanoLN 开始，因其 MOQ 低且样品交期较快；高批量 800G 和 1.6T 调制器芯片更适合评估 AFR；定制 IDM 与 MPW 代工路径可评估 Liobate。
本目录中的 TFLN 晶圆规格是否有保证？
没有。所有规格、MOQ、交期、出口说明和样品可用性均为指示性信息，采购前必须直接向供应商核实。
采购方应首先询问哪些 TFLN 晶圆问题？
先问 TTV 和 GCIB trimming、1550 nm 传播损耗、4 um 以上 BOX 厚度、到 SMF-28 的耦合损耗、DC bias drift 和 integrated heaters，以及是否适用 MOFCOM dual-use licence。
TFLN 调制器是否会触发出口管制审查？
可能会。高速调制器、dual-use photonics 和跨境技术转让可能因频率、最终用途、目的地和共享技术数据而触发 MOFCOM、EAR、ITAR、EU、Swiss 或 Japan 出口管制审查。
全球TFLN（LNOI）晶圓與調制器供應商：2026技術採購指南
2026年中國能力覆蓋的TFLN/LNOI採購起點：NanoLN適合低MOQ、快速樣品的原始晶圓；AFR適合高批量800G/1.6T調制器芯片；Liobate適合定制IDM與MPW代工路徑。Asaptic is an independent sourcing partner; listings are compiled from public registries — verify the current record before procurement.
所有規格、交期、樣品、MOQ與出口說明均為指示性信息，採購前必須與供應商及適用出口管制流程核實。